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Extra resources for 110 Semiconductor Projects for the Home Constructor
At a f r e q u e n c y of 0 . 0 5 H z . A second version of t h e circuit, using 4 0 /xF c o m p o n e n t s in t h e C\ a n d Ci p o s i t i o n s , cycled at a rate of o n c e every 6 m i n . C a n d C m u s t b e low-leakage capacitors, such as Mylar, x 2 Tantalum, etc. t. case it is necessary t o a p p l y a charging voltage t o Q , b y closing t h e ' s t a r t ' b u t t o n for a b o u t 1 sec, t o initiate circuit o p e r a t i o n . R ensures t h a t excessive gate s c u r r e n t s d o n o t flow in Q l w h e n t h e ' s t a r t ' b u t t o n is o p e r a t e d .
C. i n p u t w i t h an a m p l i t u d e greater t h a n a b o u t 100 m V is applied t o Q l base. T h e i n p u t i m p e d a n c e of t h e circuit r >i m > S 12V +Ve Fig. C. operated switch, needing 100 mV rms to operate relay is a p p r o x i m a t e l y 6 k£2. 5 V is applied t o Q l b a s e , so, w i t h n o i n p u t signal c o n n e c t e d , Q l , Q2 a n d t h e relay are off. c. plus a x . signal is a p p l i e d t o Q2 b a s e , a n d t h a t transistor is driven o n . As Q2 is driven o n , its collector m o v e s t o w a r d s +ve line p o t e n t i a l , a n d t h e relay is driven o n .
2 . 1 3 also shows t h e m o d i f i c a t i o n s n e e d e d t o enable variable timing periods t o b e o b t a i n e d . t. e x h i b i t s t h e characteristics of a simple resistor, t h e value of w h i c h can be varied via a negative bias applied t o t h e gate; 110 SEMICONDUCTOR PROJECTS 51 this resistance is low w h e n z e r o gate bias is applied, a n d very large w h e n a substantial negative gate bias is applied. t. m a k e s it suitable for use in variable voltage-operated a t t e n u a t o r n e t w o r k s , a n d Fig.